| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of maintaining sufficient heat dissipation and capable of improving withstand-voltage performance. <P>SOLUTION: A semiconductor element 1, a heat spreader 2 on which the semiconductor element 1 is mounted, and a metal foil 4 disposed on the heat spreader 2 via a semiconductive layer 8 and an insulating sheet 3 are sealed with a sealing resin 5. The metal foil 4 is exposed. The semiconductive layer 8 is disposed between the insulating sheet 3 and the surface of the heat spreader 2 opposite to the mounting surface on which the semiconductor element 1 is mounted. <P>COPYRIGHT: (C)2012,JPO&INPIT |
