摘要 |
<p>A method of depositing layer stacks for photoelectric conversion devices, e.g., solar cells and corresponding layer stacks or solar cell precursors are described. The method includes depositing a first conductivity-type silicon-containing layer for a p-i-n-junction of a solar cell, depositing an intrinsic-type silicon containing layer for a p-i-n-junction of a solar cell, and depositing a second conductivity-type layer with a conductivity-type opposite to the first conductivity-type layer. The method further includes providing a back contact, wherein the second conductivity type layer is deposited between the intrinsic- type layer and the back contact, and wherein the further conductivity-type layer is deposited by chemical vapor deposition using CO2.</p> |
申请人 |
APPLIED MATERIALS, INC.;KLEIN, STEFAN;ROHDE, MARTIN;SCHWANITZ, KONRAD;STOLLEY, TOBIAS;STOEMMER, CHRISTIAN;BUSCHBAUM, SUSANNE |
发明人 |
KLEIN, STEFAN;ROHDE, MARTIN;SCHWANITZ, KONRAD;STOLLEY, TOBIAS;STOEMMER, CHRISTIAN;BUSCHBAUM, SUSANNE |