| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device that achieves the easiness of connection between the device and a supporting substrate. <P>SOLUTION: A method of manufacturing a semiconductor light-emitting device comprises the steps of: forming a first semiconductor layer of a first conductivity type on a substrate; forming a second semiconductor layer of a second conductivity type having the opposite properties to the first conductivity type above the first semiconductor layer; forming a first isolation groove whose depth reaches the substrate and which defines a plurality of light-emitting element regions in a surface of the substrate by etching the second semiconductor layer and the first semiconductor layer; forming second isolation grooves whose depth reaches the first semiconductor layer and which define a plurality of light-emitting portions and an electrode arrangement portion in each light-emitting element region by etching the second semiconductor layer; forming first electrodes in each light-emitting portion on the second semiconductor layer; and forming a second electrode, with a shape extending in the electrode arrangement portion on the second semiconductor layer, from the first semiconductor layer exposed on the bottoms of the second isolation grooves. <P>COPYRIGHT: (C)2012,JPO&INPIT |
