发明名称 |
METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH VARIABLE PATTERN DOSAGE |
摘要 |
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed. |
申请公布号 |
US2012219886(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201113329315 |
申请日期 |
2011.12.18 |
申请人 |
FUJIMURA AKIRA;ZABLE HAROLD ROBERT;D2S, INC. |
发明人 |
FUJIMURA AKIRA;ZABLE HAROLD ROBERT |
分类号 |
G03F1/78;A61N5/06;G03F7/20;H01L21/77 |
主分类号 |
G03F1/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|