发明名称 |
STRUCTURE AND METHOD FOR HARD MASK REMOVAL ON AN SOI SUBSTRATE WITHOUT USING CMP PROCESS |
摘要 |
A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. A blocking material is deposited on a hard mask material after a deep trench reactive ion etch (RIE) process. The blocking material on top of the hard mask material is removed. A selective wet etching process is used to remove the hard mask material. Trench recess depth is effectively controlled. |
申请公布号 |
US2012217621(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213470380 |
申请日期 |
2012.05.14 |
申请人 |
KWON OH-JUNG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KWON OH-JUNG |
分类号 |
H01L29/06;G06F17/50 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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