| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type or n-type silicon fine particle layer which has a uniform thickness in particle size level without impairing the original function of silicon fine particles, and can be produced inexpensively while controlling the impurity atom concentration easily, and to provide a diode and a photoelectric conversion element having them, and an inexpensive and simple manufacturing methods therefor. <P>SOLUTION: In the semiconductor fine particle film, two kinds or more of silicon fine particles having different impurity atom concentration are mixed uniformly so that the impurity atoms have an average concentration of 10<SP POS="POST">10</SP>-10<SP POS="POST">20</SP>cm<SP POS="POST">-3</SP>, and a film-like structure is formed. In the production method of a semiconductor fine particle film, a film compound containing a reactive functional group is brought into contact with the silicon fine particle compound to form a bond between the surface functional group of the silicon fine particle. After producing a reactive silicon fine particle compound, a chemical bond is formed by reaction of the reactive functional group, and then the silicon fine particles are bonded each other and fixed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
