| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon thin-film transfer wafer in which in-plane film thickness variation of a single crystal silicon thin-film can be suppressed. <P>SOLUTION: The method of manufacturing a silicon thin-film transfer wafer includes a polishing step for abutting the surface of the silicon thin-film transfer wafer, i.e. a single crystal silicon thin-film, against polishing cloth or a polishing pad, abutting the rear surface of the silicon thin-film transfer wafer against a backing pad composed of a thin-film material having a flexural rigidity of 150 GPa or higher in Young's modulus, pressing the silicon thin-film transfer wafer through the backing pad from the rear surface, and then polishing the surface of the single crystal silicon thin-film with the polishing cloth or the polishing pad. <P>COPYRIGHT: (C)2012,JPO&INPIT |
