FIN-TRANSISTOR FORMED ON A PATTERNED STI REGION BY LATE FIN ETCH

摘要

PURPOSE: A fin-transistor being formed in an area patterned by fin etching in a late process is provided to form high-k metallic gate electrode structures being electrically secluded by eliminating unselective exceeded materials with a CMP(Chemical Mechanical Planarization). CONSTITUTION: A plurality of secluded regions(203c) is formed in a semiconductor area(203). Semiconductor pins(210) are separated to a lateral side by the corresponding secluded regions(203f). A place holder electrode structure(260) is formed on a semiconductor region. Drains and source regions are formed in each pin. A recess is selectively formed in the central part of the secluded regions.