| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an image sensor capable of having improved charge transmission efficiency and an improved fill factor. <P>SOLUTION: An image sensor 5 includes: a semiconductor layer 100 having a first surface 1 and a second surface 2; a wiring layer 200 provided on the first surface 1 of the semiconductor layer 100; and a light-transmitting layer 300 provided on the second surface 2 of the semiconductor layer 100. The semiconductor layer 100 includes a p-type impurity layer 113 and an n-type impurity layer 111 that form a photoelectric conversion part 110. A floating diffusion region 131 formed in the p-type impurity layer 113 and a transfer gate electrode 123 formed surrounding the floating diffusion region 131 are provided on the first surface 1 side on the n-type impurity layer 111. This can reduce the distance between the transfer gate electrode 123 and a point of the photoelectric conversion part 110 at which the potential is highest, and thereby improving the efficiency of transmitting charges to the floating diffusion region 131. <P>COPYRIGHT: (C)2012,JPO&INPIT |
