| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can prevent propagation of cracks into a film under a stopper film in polishing films on a substrate by the CMP method. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a plurality of films on a substrate in the same chamber without taking out the substrate from the chamber; forming a film to be polished on the plurality of films; and polishing the film to be polished by the chemical mechanical polishing (CMP) method using a film on a surface side among the plurality of films as a stopper. <P>COPYRIGHT: (C)2012,JPO&INPIT |
