SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To resolve problems that, although a GaN-based semiconductor is epitaxially grown on a (111)-oriented silicon substrate, since a difference between a lattice constant of GaN and a lattice constant of a silicon (111) plane is as large as about 17%, dislocation more than 1010cm-2is introduced to the grown GaN, which causes increase in a leakage current of a transistor using GaN and reduction in mobility of the transistor.

SOLUTION: A semiconductor substrate has a silicon substrate and a nitride semiconductor layer epitaxially grown on a (150) plane of the silicon substrate.

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