| 摘要 |
A MISFET-type hydrogen gas sensor having low power consumption which can be operated for one year or longer at a low voltage power source (for example, 1.5 to 3 V) is achieved. A sensor FET is formed in a MEMS region 34 where a Si substrate 22 of a SOI substrate is bored, and a heater wiring 32 is arranged so as to be folded between a Pi-Ti—O gate 28 and a source electrode 31S of the sensor FET and between the Pt—Ti—O gate 28 and a drain electrode 31D thereof, respectively. Further, a plurality of through-holes 36 obtained by removing a protective film so as to expose an embedded insulation layer of the SOI substrate are formed in a region where an intrinsic FET region 35 where the sensor FET is formed does not overlap with the MEMS region 34 and except for bridge regions 90, 90S, 90G, and 90H where lead-out wirings 20S, 20D, 20G, and 20H are formed and except for reinforced regions 91.
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