发明名称 |
DEVICE, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE DEVICE AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR |
摘要 |
<p>A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a À-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.</p> |
申请公布号 |
KR20120095965(A) |
申请公布日期 |
2012.08.29 |
申请号 |
KR20127015022 |
申请日期 |
2010.11.18 |
申请人 |
SUMITOMO CHEMICAL CO., LTD.;PANASONIC CORPORATION |
发明人 |
SHINKAI SEIJI;HARAGUCHI SHUICHI;SHIRAKI TOMOHIRO;OGAWA MASASHI;NAKATANI SHUHEI;SAKANOUE KEI;GOTO OSAMU;KAKIMOTO HIDENOBU |
分类号 |
H01L51/50;H01L51/42;H05B33/10 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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