发明名称 |
PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
PURPOSE: A photoelectric conversion device with a light-transmission conductive film is provided to improve a light absorbing characteristic in a light absorbing layer by lengthily forming a light path on the light absorbing layer. CONSTITUTION: A first electrode(110) is formed on a substrate(100). A first silicon semiconductor layer(130) is formed on the first electrode. A second silicon semiconductor layer(140) is formed on a first silicon semiconductor layer. A light-transmission conductive film(160) is formed on the second silicon semiconductor layer. A second electrode(120) is formed on the light-transmission conductive film. |
申请公布号 |
KR20120095786(A) |
申请公布日期 |
2012.08.29 |
申请号 |
KR20120014375 |
申请日期 |
2012.02.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ISAKA FUMITO;NISHIDA JIRO |
分类号 |
H01L31/075;H01L31/0224;H01L31/0236;H01L31/042 |
主分类号 |
H01L31/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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