发明名称 PHOTOELECTRIC CONVERSION DEVICE
摘要 PURPOSE: A photoelectric conversion device with a light-transmission conductive film is provided to improve a light absorbing characteristic in a light absorbing layer by lengthily forming a light path on the light absorbing layer. CONSTITUTION: A first electrode(110) is formed on a substrate(100). A first silicon semiconductor layer(130) is formed on the first electrode. A second silicon semiconductor layer(140) is formed on a first silicon semiconductor layer. A light-transmission conductive film(160) is formed on the second silicon semiconductor layer. A second electrode(120) is formed on the light-transmission conductive film.
申请公布号 KR20120095786(A) 申请公布日期 2012.08.29
申请号 KR20120014375 申请日期 2012.02.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;ISAKA FUMITO;NISHIDA JIRO
分类号 H01L31/075;H01L31/0224;H01L31/0236;H01L31/042 主分类号 H01L31/075
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