| 发明名称 |
Zinc-tin oxide thin-film transistors |
| 摘要 |
Methods of forming transparent zinc-tin oxide structures are described. Devices that include transparent zinc-tin oxide structures as at least one of a channel layer in a transistor or a transparent film disposed over an electrical device that is at a substrate. |
| 申请公布号 |
US8252697(B2) |
申请公布日期 |
2012.08.28 |
| 申请号 |
US20070803261 |
申请日期 |
2007.05.14 |
| 申请人 |
AHN KIE Y.;FORBES LEONARD;MICRON TECHNOLOGY, INC. |
发明人 |
AHN KIE Y.;FORBES LEONARD |
| 分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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