发明名称 Electronic devices with improved OHMIC contact
摘要 In one embodiment, the disclosure relates to an electronic device successively comprising from its base to its surface: (a) a support layer, (b) a channel layer adapted to contain an electron gas, (c) a barrier layer and (d) at least one ohmic contact electrode formed by a superposition of metallic layers, a first layer of which is in contact with the barrier layer. The device is remarkable in that the barrier layer includes a contact region under the ohmic contact electrode(s). The contact region includes at least one metal selected from the metals forming the superposition of metallic layers. Furthermore, a local alloying binds the contact region and the first layer of the electrode(s).
申请公布号 US8253170(B2) 申请公布日期 2012.08.28
申请号 US201113108944 申请日期 2011.05.16
申请人 LAHRECHE HACENE;SOITEC SA & SOITEC USA, INC. 发明人 LAHRECHE HACENE
分类号 H01L31/0328;H01L29/778;H01L29/80;H01L31/112 主分类号 H01L31/0328
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