发明名称 |
Method for forming antimony-based FETs monolithically |
摘要 |
An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer. |
申请公布号 |
US8253167(B2) |
申请公布日期 |
2012.08.28 |
申请号 |
US20100694002 |
申请日期 |
2010.01.26 |
申请人 |
LIN HENG-KUANG;CHIU PEI-CHIN;CHYI JEN-INN;HO HAN-CHIEH;WANN CLEMENT HSINGJEN;KO CHIH-HSIN;WU CHENG-HSIEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;NATIONAL CENTRAL UNIVERSITY |
发明人 |
LIN HENG-KUANG;CHIU PEI-CHIN;CHYI JEN-INN;HO HAN-CHIEH;WANN CLEMENT HSINGJEN;KO CHIH-HSIN;WU CHENG-HSIEN |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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