发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.
申请公布号 US8252628(B2) 申请公布日期 2012.08.28
申请号 US20080046637 申请日期 2008.03.12
申请人 NABE YOSHIHIRO;ASAMI HIROSHI;TAKAOKA YUJI;HARADA YOSHIMICHI;SONY CORPORATION 发明人 NABE YOSHIHIRO;ASAMI HIROSHI;TAKAOKA YUJI;HARADA YOSHIMICHI
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址