| 摘要 |
PURPOSE: A nonvolatile memory device and a program verifying method thereof are provided to prevent a threshold voltage distribution from increasing by constantly maintaining a bit line sensing current. CONSTITUTION: A first program verification voltage(PV1) is applied to a word line connected to a memory cell selected in a memory cell array. The potential of the bit line connected to the selected memory cell is sensed according to a first sensing signal. A second program verification voltage(PV2) higher than the first program verification voltage is applied to the word line. The potential of the bit line is sensed according to a second sensing signal which is lower than the first sensing signal.
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