| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the electrical malfunction of a transistor by forming a new structure of a through silicon via on a semiconductor chip of a wafer state. CONSTITUTION: A via hole(12) is formed into a predetermined depth near a bonding pad(24) of each semiconductor chip(10) in a wafer level. A conductive metal(20) is filled in the floor of the via hole. The conductive metal is one selected from nickel, chrome, and tungsten. A conductive metal(14) made of copper materials is laminated on the conductive metal.
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