Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers.
申请公布号
WO2012111009(A2)
申请公布日期
2012.08.23
申请号
WO2012IL50046
申请日期
2012.02.14
申请人
YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREWUNIVERSITY OF JERUSALEM LTD.;RAMOT AT TEL-AVIV UNIVERSITY LTD.;COHEN, GUY;MILLO, ODED;MOCATTA, DAVID;RABANI, ERAN;BANIN, URI
发明人
COHEN, GUY;MILLO, ODED;MOCATTA, DAVID;RABANI, ERAN;BANIN, URI