LOW TEMPERATURE EPITAXIAL GROWTH OF SILICON-CONTAINING FILMS USING UV RADIATION,申请号KR20067017802-传众专利搜索

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发明名称	LOW TEMPERATURE EPITAXIAL GROWTH OF SILICON-CONTAINING FILMS USING UV RADIATION
摘要
申请公布号	KR101176668(B1)	申请公布日期	2012.08.23
申请号	KR20067017802	申请日期	2005.06.09
申请人		发明人
分类号	H01L21/20;H01L21/304;H01L27/12	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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