发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide.
申请公布号 US2012211761(A1) 申请公布日期 2012.08.23
申请号 US201113315682 申请日期 2011.12.09
申请人 YAMADA ATSUSHI;FUJITSU LIMITED 发明人 YAMADA ATSUSHI
分类号 H01L29/772;H01L21/336 主分类号 H01L29/772
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