| 摘要 |
<p>The present specification concerns a sputtering magnetron assembly (104,204,304) comprising a rotatable tubular target cathode (105,205,305) and a magnetic field generating device (106,206,306) installed within the tubular target cathode (105,205,305). At least part of the magnetic field generating device (106,206,306) is configured to move within the tubular target cathode (105,205,305) so as to maintain within a predetermined range a magnetic field strength H at an outer surface (110,210,310) of the tubular target cathode (105,205,305) during erosion of said outer surface. The present specification also relates to a physical vapour deposition method using such a sputtering magnetron assembly (104,204,304).</p> |
