METHOD OF MANUFACTURING GAAS INGOT

摘要

PURPOSE: A manufacturing method of a GaAs(Gallium arsenide) ingot is provided to manufacture the GaAs ingot of high quality in which EPD(Etched Pit Density) is minimized with high yield using an LEC(Liquid Encapsulated Czochralski) method. CONSTITUTION: A reaction container(20) revolves in a counterclockwise direction by a crucible rotation shaft(C). A seed crystal rotary shaft(15) which revolves in a clockwise direction is located at the upper side of the reaction container. A structure(30) supports the reaction container. A resistance heater(40) is formed into a cylindrical type and surrounds the reaction container. The resistance heater melts raw material inside the reaction container.