| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a more correct measurement value by removing an error generated in photoelectric conversion when measuring a temperature change by detecting infrared rays by a thermal sensor using a Schottky barrier diode. <P>SOLUTION: A metal thin film 2 and an SOI layer 3 form a Schottky barrier diode (hereinafter, a diode) 1. The thermal sensor is composed by using the diode 1. Control means 6 allows an ammeter 5 to measure a current value A of a current flowing into the reversely-biased diode 1 in a state that light from an infrared generation source 20 is not applied to the diode 1, a current value B of a current flowing into the reversely-biased diode 1 in a state that a shutter 22 is opened and light from the infrared generation source 20 is applied to the diode 1 and a current value C of a current flowing into the diode 1 in a short-circuit state while holding a state that light is applied to the diode 1. Calculation means 9 performs calculation such as (current value B-current value C)-current value A to estimate the temperature change of the thermal sensor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
