| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging element including a photoelectric conversion element made of an organic material, capable of preventing a dark current. <P>SOLUTION: In a semiconductor substrate 1 below a photoelectric conversion part including a pair of electrodes 11 and 13 and a photoelectric conversion layer 12a arranged between the pair of electrodes 11 and 13 and absorbing green light, a blue-color photodiode having a pn-junction surface formed at a position where blue light can be absorbed, and a red-color photodiode having the pn-junction surface at a position where red light can be absorbed, are formed. A relative dielectric constant of a blocking layer 12b provided between the electrode 13 and the photoelectric conversion layer 12a is larger than that of the photoelectric conversion layer 12a. A value obtained by dividing a thickness of the photoelectric conversion layer 12a by the relative dielectric constant is larger than a value obtained by dividing a thickness of the blocking layer 12b by the relative dielectric constant. <P>COPYRIGHT: (C)2012,JPO&INPIT |
