发明名称 Semiconductor Device And Method For Manufacturing Same
摘要 A semiconductor device includes (i) a tape base material, (ii) a wiring pattern, (iii) a semiconductor element which is electrically connected with the wiring pattern, (iv) a top-side insulating protective film which covers a top surface of the tape base material and has an top-side opening section provided in a region where the top-side insulating protective film faces the semiconductor element, and (v) a reverse-side insulating protective film which covers a reverse surface of the tape base material and has a reverse-side opening section provided on a reverse side below the top-side opening section. The top-side insulating protective film has a protruding opening section extending outwardly from the region. An opening of the reverse-side opening section is 1.00 time to 8.50 times larger in an area than the region.
申请公布号 US2012211877(A1) 申请公布日期 2012.08.23
申请号 US201213398910 申请日期 2012.02.17
申请人 IWANE TOMOHIKO;SHARP KABUSHIKI KAISHA 发明人 IWANE TOMOHIKO
分类号 H01L23/48;H01L21/60 主分类号 H01L23/48
代理机构 代理人
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