发明名称 METHOD OF FORMING NANO DIMPLE PATTERN AND NANOSTRUCTURE
摘要 PURPOSE: A formation method of nano-dimple patterns and nano-structures are provided to form nano-dimple patterns without nano-masks and lithographic process. CONSTITUTION: A formation method of nano-dimple patterns comprises the following steps: forming a mask layer(110) which includes polymer particles(112) on a substrate(105); selectively etching the surface of the substrate by using the mask layer as an etching protection layer; and forming a nano-dimple pattern(120) on the top of the substrate. The mask layer has openings(115) which expose the substrate between the polymer particles. The mask layer formation step comprises the following step: forming a monolayer of polystyrene particles on top of the substrate by using a spin coating method. The nano-dimple pattern formation step comprises the following step: etching the substrate by providing fluorine steam vapor on top of the substrate through the opening.
申请公布号 KR20120093470(A) 申请公布日期 2012.08.23
申请号 KR20110013045 申请日期 2011.02.15
申请人 KOREA INSTITUTE OF MACHINERY & MATERIALS 发明人 RNA, JONG JOO;KIM, WAN DOO;LIM, HYEON EUI;BAE, JONG SOO
分类号 C03C15/00;B44C1/22;C03C23/00 主分类号 C03C15/00
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