发明名称 |
SLURRY COMPOSITION FOR CMP, AND POLISHING METHOD |
摘要 |
<p>The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.</p> |
申请公布号 |
EP2489714(A2) |
申请公布日期 |
2012.08.22 |
申请号 |
EP20100825143 |
申请日期 |
2010.10.13 |
申请人 |
LG CHEM, LTD. |
发明人 |
SHIN, DONG-MOK;CHOI, EUN-MI;CHO, SEUNG-BEOM |
分类号 |
C09K3/14;C09G1/02;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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