| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to form patterns having different width at the same time by a sidewall mask process. CONSTITUTION: Work-pieces(11, 12) are formed on a semiconductor substrate(10). A core(13) including a first portion and a second portion is formed on the work-pieces. A coating material coats the upper side and side of the core and has a lamination layer including a first layer and a second layer. A first sidewall mask is formed at the side of the first portion of the core and a second sidewall mask is formed at the side of the second portion of the core by etching the coating material. The core is eliminated. Patterns having different width are formed by etching the wore-pieces.</p> |
