| 摘要 |
A sensor comprising at least one resistive switching sensing element comprising a resistive switching layer (15, 25, 35) that can be switched from a high resistance state to a low resistance state by creating a first electric field over the resistive switching layer (15, 25, 35) and that can be switched from the low resistance state to the high resistance state by creating a second electric field over the resistive switching layer (15, 25, 35). |
