发明名称 Flash memory device and systems and reading methods thereof
摘要 A read method of a flash memory device is provided which comprises reading a plurality of adjacent memory cells connected with a word line different from a plurality of selected memory cells; reading the plurality of selected memory cells one or more times using a plurality of coupling compensation parameters; and selectively latching the read result of the selected memory cells based on the read result of the adjacent memory cells.
申请公布号 US8248858(B2) 申请公布日期 2012.08.21
申请号 US201113137437 申请日期 2011.08.16
申请人 KANG SANGGU;SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SANGGU
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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