发明名称 |
Flash memory device and systems and reading methods thereof |
摘要 |
A read method of a flash memory device is provided which comprises reading a plurality of adjacent memory cells connected with a word line different from a plurality of selected memory cells; reading the plurality of selected memory cells one or more times using a plurality of coupling compensation parameters; and selectively latching the read result of the selected memory cells based on the read result of the adjacent memory cells. |
申请公布号 |
US8248858(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US201113137437 |
申请日期 |
2011.08.16 |
申请人 |
KANG SANGGU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANGGU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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