发明名称 |
Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
摘要 |
An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer, an impurity semiconductor layer is provided over the silicon layer, and a source electrode layer and a drain electrode layer are provided to be electrically connected to the impurity semiconductor layer. |
申请公布号 |
US8247812(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20100699969 |
申请日期 |
2010.02.04 |
申请人 |
SAKATA JUNICHIRO;GODO HIROMICHI;SHIMAZU TAKASHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAKATA JUNICHIRO;GODO HIROMICHI;SHIMAZU TAKASHI |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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