发明名称 |
Single crystal silicon carbide nanowire, method of preparation thereof, and filter comprising the same |
摘要 |
Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime. |
申请公布号 |
US8246743(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20070919809 |
申请日期 |
2007.08.16 |
申请人 |
CHOI SUNG-CHURL;LEE SANG-HOON;LEE JIN-SEOK;BYEUN YUN-KI;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
CHOI SUNG-CHURL;LEE SANG-HOON;LEE JIN-SEOK;BYEUN YUN-KI |
分类号 |
C30B1/00 |
主分类号 |
C30B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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