发明名称 |
Imaging device by buried photodiode structure |
摘要 |
An n-type region as a charge storage region of a photodiode is buried in a substrate. The interface between silicon and a silicon oxide film is covered with a high concentration p-layer and a lower concentration p-layer is formed only in the portion immediately below a floating electrode for signal extraction. Electrons generated by light are stored in the charge storage region, thereby changing the potential of the portion of the p-layer at the surface of the semiconductor region. The change is transmitted through a thin insulating film to the floating electrode by capacitive coupling and read out by a buffer transistor. Initialization of charges is executed by adding a positive high voltage to the gate electrode of a first transfer transistor such that the electrons stored in the charge storage region are transferred to the n+ region and generation of reset noise is protected. |
申请公布号 |
US8247848(B2) |
申请公布日期 |
2012.08.21 |
申请号 |
US20100907705 |
申请日期 |
2010.10.19 |
申请人 |
KAWAHITO SHOJI;NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY |
发明人 |
KAWAHITO SHOJI |
分类号 |
H01L27/146;H04N5/335;H04N5/357;H04N5/361;H04N5/363;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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