| 摘要 |
To provide a magnetic memory device that can suppress the reduction of function of a magnetic memory element, and a manufacturing method thereof. A magnetic memory device includes a magnetic memory element capable of holding data based on a magnetized state thereof, and a digit line and a bit line which are capable of changing the magnetized state of the magnetic memory element by a magnetic field generated. The magnetic memory element is disposed above the digit line and the bit line at an intersection part of the digit line and the bit line. The digit line has a first width at the intersection part, and the bit line has a second width at the intersection part. The first width is larger than a third width of the magnetic memory element, and the second width is smaller than a fourth width of the magnetic memory element. |
