| 发明名称 |
METHODS FOR FABRICATING PASSIVATED SILICON NANOWIRES AND DEVICES THUS OBTAINED |
| 摘要 |
<p>Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches.</p> |
| 申请公布号 |
KR20120092091(A) |
申请公布日期 |
2012.08.20 |
| 申请号 |
KR20127001670 |
申请日期 |
2010.06.23 |
| 申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
SCHERER AXEL;WALAVALKAR SAMEER;HENRY MICHAEL D.;HOMYK ANDREW P. |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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