发明名称 |
REPROCESSING METHOD OF SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD OF REPROCESSED SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD OF SOI SUBSTRATE |
摘要 |
An object of an embodiment of the disclosed invention is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substrate in which a step portion including a damaged semiconductor region and an insulating layer exists in a peripheral portion, whereby the insulating layer is removed; etching treatment is performed on the semiconductor substrate with the use of a mixed solution including a substance that oxidizes a semiconductor material included in the semiconductor substrate, a substance that dissolves the oxidized semiconductor material, and a substance that controls oxidation speed of the semiconductor material and dissolution speed of the oxidized semiconductor material, whereby the damaged semiconductor region is selectively removed with a non-damaged semiconductor region left; and heat treatment under an atmosphere including hydrogen is performed. |
申请公布号 |
KR20120091193(A) |
申请公布日期 |
2012.08.17 |
申请号 |
KR20127011943 |
申请日期 |
2010.09.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHNUMA HIDETO;HANAOKA KAZUYA |
分类号 |
H01L21/02;H01L21/20;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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