MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce oxygen defects of an oxide semiconductor including a channel forming region. CONSTITUTION: An underlying insulation layer(102) is formed on a substrate(101). A gate electrode(103) is formed on the underlying insulation layer. A gate insulation layer(104) is formed on the gate electrode. An oxide semiconductor layer(105) is formed on the gate insulation layer. A source electrode(106a) and a drain electrode(106b) are formed on the oxide semiconductor layer.