| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can perform variable wavelength operation without lowering the output, and can perform high output operation with low power consumption, and to provide a semiconductor laser device equipped with it. <P>SOLUTION: A diffraction grating layer 25 is provided along an active layer 24. On the diffraction grating layer 25 in a front DFB region S1, a chirp diffraction grating 30 where the lattice spacing changes continuously in the output direction of laser light is formed, and a uniform diffraction grating 31 including a region of constant lattice spacing is formed on the diffraction grating layer 25 in a rear DFB region S2. On the reverse side of the diffraction grating layer 25 sandwiching the active layer 24, a tuning layer 22 capable of injecting a current independently from the active layer 24 is provided. A tuning electrode 28 is provided in the rear DFB region S2, and a current is injected into the tuning layer 22 of the rear DFB region S2 independently from the front DFB region S1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
