PHOTODETECTION DEVICE

摘要

The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (?) comprising a multilayer with: a layer (11) of a partially absorbent semiconductor; a spacer layer (12) made of a material that is transparent to said wavelength; and a structured metallic mirror (13), the distance (g) between the top of said mirror and said spacer layer being smaller than ? and said mirror comprising a network of holes defining an array of metallic reliefs with a pitch P of between 0.5 ?/nSC and 1.5 ?/nSC, where nSC is the real part of the refractive index of the semiconductor, a relief width L of between 9P/10 and P/2 and a hole depth h of between ?/100 and ?/15.