发明名称 |
METHOD TO FABRICATE COPPER WIRING STRUCTURES AND STRUCTURES FORMED TEHREBY |
摘要 |
Techniques formation of high purity copper (Cu)-filled lines and vias are provided. In one aspect, a method of fabricating lines and vias filled with high purity copper with is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A Cu layer is deposited on the Ru layer by a sputtering process. A reflow anneal is performed to eliminate voids in the lines and vias. |
申请公布号 |
US2012205804(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201113025322 |
申请日期 |
2011.02.11 |
申请人 |
MCFEELY FENTON READ;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MCFEELY FENTON READ;YANG CHIH-CHAO |
分类号 |
H01L23/48;H01L21/4763 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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