| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a TFT substrate, along with its manufacturing method, capable of significantly reducing a manufacturing cost by decreasing the number of manufacturing processes, with stable operation for an extended period while crosstalk is prevented. <P>SOLUTION: The TFT substrate 1 comprises a glass substrate 10, a gate electrode 23 and a gate wiring 24 whose upper surface is covered with a gate insulating film 30 while the side surface is covered with an interlayer insulating film 50 for insulation, an n-type oxide semiconductor layer 40 formed on the gate insulating film 30 on the gate electrode 23, an oxide transparent conductor layer 60 formed, separated by a channel part 44, on the n-type oxide semiconductor layer 40, and a channel guard 500 for protecting the channel part 44. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
