| 摘要 |
Disclosed herein is a semiconductor device including: a gate electrode formed in a recess dug in the surface of a semiconductor substrate, with a gate insulating film interposed between the gate electrode and the semiconductor substrate; a source-drain diffusion layer formed on that surface of the semiconductor substrate which is adjacent to both sides of the gate electrode; and a stress applying layer which is formed deep from the surface of the semiconductor substrate in such a way as to cover the surface of the source-drain diffusion layer. |
