| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to simplify a manufacturing process by patterning the same conductive layer as a plate of a cell capacitor and forming a plate guard ring. CONSTITUTION: A conductive line(12A) is formed on an upper portion of a substrate(11) of a peripheral circuit region. A first interlayer insulating film(14) covers the conductive line. A plate guard ring(20A) is formed on the first interlayer insulating film. A contact(27) is connected to the conductive line through the first interlayer insulating film. A cell capacitor(21) comprises a plate(20), a dielectric material(19), and a storage node(18).
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