发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor capable of forming a nitride semiconductor having excellent crystallinity with high reproducibility. <P>SOLUTION: A method of manufacturing a nitride semiconductor comprises the steps of: arranging a sapphire substrate having a c-plane as a main surface and a target containing aluminum with a distance; forming an aluminum-containing nitride intermediate layer on a surface of the sapphire substrate by the DC magnetron sputtering method performed by applying a voltage through the DC-continuous method between the sapphire substrate and the target; and forming a nitride semiconductor having the (004) plane as a main surface on the aluminum-containing nitride intermediate layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012151503(A) |
申请公布日期 |
2012.08.09 |
申请号 |
JP20120087592 |
申请日期 |
2012.04.06 |
申请人 |
SHARP CORP |
发明人 |
ARAKI MASAHIRO;UCHIUMI TAKAAKI;SAKATA MASAHIKO |
分类号 |
H01L21/205;C23C14/34;C23C16/34;H01L21/203;H01L33/32 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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