| 发明名称 |
Defect Reduction Using Aspect Ratio Trapping |
| 摘要 |
Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls. |
| 申请公布号 |
US2012199876(A1) |
申请公布日期 |
2012.08.09 |
| 申请号 |
US201213446612 |
申请日期 |
2012.04.13 |
| 申请人 |
BAI JIE;PARK JI-SOO;LOCHTEFELD ANTHONY J.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
BAI JIE;PARK JI-SOO;LOCHTEFELD ANTHONY J. |
| 分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
| 代理机构 |
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