METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED PLUG
摘要
<p>PURPOSE: A manufacturing method of a semiconductor device having a self-aligned plug is provided to have good electrical properties by forming lower electrodes and data storage plugs on a semiconductor substrate. CONSTITUTION: A conductive pattern is formed on a semiconductor substrate(31). An insulating layer with an opening part(549G) exposing the conductive pattern is formed. A data storage plug is formed on a lower electrode(551) and a spacer(550). The data storage plug includes a first side wall and a second side wall.</p>
申请公布号
KR20120089063(A)
申请公布日期
2012.08.09
申请号
KR20110010185
申请日期
2011.02.01
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
EOM, KYOUNG HA;KWON, SUNG UN;SHIN, CHUL HO;JEONG, SANG SUP