发明名称 METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED PLUG
摘要 <p>PURPOSE: A manufacturing method of a semiconductor device having a self-aligned plug is provided to have good electrical properties by forming lower electrodes and data storage plugs on a semiconductor substrate. CONSTITUTION: A conductive pattern is formed on a semiconductor substrate(31). An insulating layer with an opening part(549G) exposing the conductive pattern is formed. A data storage plug is formed on a lower electrode(551) and a spacer(550). The data storage plug includes a first side wall and a second side wall.</p>
申请公布号 KR20120089063(A) 申请公布日期 2012.08.09
申请号 KR20110010185 申请日期 2011.02.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 EOM, KYOUNG HA;KWON, SUNG UN;SHIN, CHUL HO;JEONG, SANG SUP
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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