MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent current leakage by forming a hydroxyl group on the surface of a silicon oxynitride film. CONSTITUTION: A silicon oxide film is formed on a base layer(10). The base layer includes silicon. A silicon oxynitride film(21) is formed by injecting nitrogen into the silicon oxide film. A hydroxyl group is formed on the surface of the silicon oxynitride film by etching the silicon oxynitride film. A high-K dielectric film is formed on the silicon oxynitride film.